FQI12N60TU
MOSFET N-CH 600V 10.5A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQI12N60TU is an N-Channel MOSFET designed for high-voltage applications. This component offers a 600V drain-source voltage (Vdss) and a continuous drain current capability of 10.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 700mOhm at 5.3A and 10V gate drive, it facilitates efficient power switching. The device features a typical gate charge of 54 nC and input capacitance of 1900 pF, optimized for robust switching performance. Housed in a TO-262 (I2PAK) through-hole package, the FQI12N60TU provides a maximum power dissipation of 180W at 25°C (Tc). This MOSFET is suitable for use in power supply units, industrial motor control, and lighting applications. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±30V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 180W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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