FQI12N60CTU
MOSFET N-CH 600V 12A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQI12N60CTU is a QFET® series N-Channel MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 12A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 650mOhm at 6A and 10V gate drive. Key parameters include input capacitance (Ciss) of 2290pF (max) at 25V and gate charge (Qg) of 63nC (max) at 10V. Power dissipation capabilities are 3.13W at ambient temperature (Ta) and 225W at case temperature (Tc). The FQI12N60CTU is housed in a TO-262-3 Long Leads, I2PAK package for through-hole mounting and operates across a temperature range of -55°C to 150°C. This device is suitable for use in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 225W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V |
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