FQI11N40TU
MOSFET N-CH 400V 11.4A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQI11N40TU is an N-Channel Power MOSFET designed for high-voltage applications. This component offers a Vds of 400V and a continuous drain current of 11.4A at 25°C (Tc). The device features a low Rds(on) of 480mOhm maximum at 5.7A and 10V Vgs. Key parameters include a gate charge (Qg) of 35 nC maximum at 10V and input capacitance (Ciss) of 1400 pF maximum at 25V. With a maximum power dissipation of 147W (Tc), this MOSFET is packaged in an I2PAK (TO-262-3 Long Leads) with through-hole mounting. It operates within a temperature range of -55°C to 150°C (TJ) and is suitable for use in power supply units, lighting applications, and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 5.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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