FQI10N60CTU
MOSFET N-CH 600V 9.5A I2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FQI10N60CTU is a 600V N-Channel QFET® series MOSFET. This through-hole component, packaged in an I2PAK (TO-262) configuration, offers a continuous drain current of 9.5A at 25°C. Key electrical specifications include a drain-to-source voltage of 600V, a maximum Rds(on) of 730mOhm at 4.75A and 10V gate drive, and a typical gate charge of 57 nC at 10V. With a maximum power dissipation of 156W at 25°C case temperature, this MOSFET is suitable for applications in power supply, lighting, and motor control. The operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 4.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
