FQH18N50V2
MOSFET N-CH 500V 20A TO247-3Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor FQH18N50V2 is a QFET® series N-Channel Power MOSFET. This component features a drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 20A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 265mOhm at 10A and 10V, with a gate threshold voltage (Vgs(th)) of 5V at 250µA. It has an input capacitance (Ciss) of 3290pF at 25V and a gate charge (Qg) of 55nC at 10V. The FQH18N50V2 is packaged in a TO-247-3 through-hole configuration and offers a maximum power dissipation of 277W at 25°C (Tc). This MOSFET is designed for applications in power supply, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 265mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
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