FQD6N50CTF
MOSFET N-CH 500V 4.5A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel Power MOSFET, FQD6N50CTF, offers a 500V drain-to-source voltage with a continuous drain current of 4.5A at 25°C (Tc). This device features a 1.2 Ohm maximum Rds On at 2.25A and 10V Vgs. The N-Channel MOSFET is designed for surface mount applications within the TO-252 (DPAK) package. Key parameters include a 25 nC maximum gate charge at 10V Vgs and 700 pF maximum input capacitance at 25V Vds. With a maximum power dissipation of 61W at 25°C (Tc), this component is suitable for demanding power applications across various industries. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 61W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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