FQD5N50TM
MOSFET N-CH 500V 3.5A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQD5N50TM is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 3.5 A at 25°C. The Rds On is specified at a maximum of 1.8 Ohm when driven at 10 V with an Id of 1.75 A. With a maximum power dissipation of 50 W at a case temperature of 25°C, and 2.5 W at an ambient temperature of 25°C, the FQD5N50TM is suitable for power conversion and control circuits. The device is housed in a TO-252 (DPAK) surface-mount package, facilitating efficient board space utilization. Key electrical characteristics include a gate charge of 17 nC at 10 V and an input capacitance of 610 pF at 25 V. Operating temperature range is from -55°C to 150°C. This MOSFET is commonly utilized in power supplies, lighting, and general-purpose power switching applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 1.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
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