FQD5N30TM
MOSFET N-CH 300V 4.4A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQD5N30TM is an N-Channel QFET® series power MOSFET designed for demanding applications. This TO-252 (DPAK) surface mount component features a 300V drain-source voltage (Vdss) and a continuous drain current of 4.4A at 25°C (Tc). The FQD5N30TM offers a maximum on-resistance (Rds On) of 900mOhm at 2.2A and 10V gate drive. Key electrical parameters include a maximum gate charge (Qg) of 13 nC at 10V and an input capacitance (Ciss) of 430 pF at 25V. Power dissipation is rated at 2.5W (Ta) and 45W (Tc). This device is suitable for use in power supply circuits, motor control, and lighting applications. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |