FQD4N50TM
MOSFET N-CH 500V 2.6A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® FQD4N50TM is a 500V N-Channel MOSFET designed for power switching applications. This device features a continuous drain current (Id) of 2.6A at 25°C (Tc) and a low on-resistance (Rds On) of 2.7 Ohms maximum at 1.3A, 10V. The FQD4N50TM offers a drain-to-source voltage (Vdss) of 500V and a gate-source voltage (Vgs) tolerance up to ±30V. With a maximum gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 460 pF at 25V, it is suitable for efficient switching. The device is packaged in a TO-252 (DPAK) surface mount configuration, providing a thermal resistance suitable for power dissipation up to 45W (Tc). Key applications include power supplies, motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |