FQD4N50TF
MOSFET N-CH 500V 2.6A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQD4N50TF is an N-Channel Power MOSFET from the QFET® series, designed for high-efficiency switching applications. This TO-252 (DPAK) surface-mount device offers a 500V drain-source breakdown voltage (Vdss). With a continuous drain current (Id) of 2.6A at 25°C (Tc), it features a maximum on-resistance (Rds On) of 2.7 Ohms at 1.3A and 10V Vgs. Key parameters include a gate charge (Qg) of 13 nC (max) at 10V and an input capacitance (Ciss) of 460 pF (max) at 25V. Power dissipation is rated at 45W (Tc) and 2.5W (Ta). The operating temperature range is -55°C to 150°C. This component finds application in power supply units, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |