FQD3N40TM
MOSFET N-CH 400V 2A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQD3N40TM is an N-Channel QFET® MOSFET designed for high-voltage applications. This component features a 400V drain-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C. With a maximum Rds On of 3.4 Ohms at 1A and 10V, it offers efficient switching characteristics. The FQD3N40TM is packaged in a TO-252 (DPAK) surface-mount case, suitable for demanding thermal management with a power dissipation of 30W (Tc). Key parameters include a gate charge (Qg) of 7.5 nC at 10V and an input capacitance (Ciss) of 230 pF at 25V. This device is utilized in power supply units, lighting, and industrial control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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