FQD2N50TF
MOSFET N-CH 500V 1.6A DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQD2N50TF is an N-Channel Power MOSFET from the QFET® series. This device features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 1.6 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 5.3 Ohms at 800 mA and 10 V gate drive, it offers efficient switching performance. The MOSFET is packaged in a surface-mount TO-252 (DPAK) and supports a gate-source voltage (Vgs) range of ±30 V, with a threshold voltage (Vgs(th)) of 5 V at 250 µA. Key electrical characteristics include a maximum gate charge (Qg) of 8 nC and input capacitance (Ciss) of 230 pF at 25 V. Power dissipation is rated at 2.5 W (Ta) and 30 W (Tc). This component is suitable for applications in power supplies, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |