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FQD1N60TM

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FQD1N60TM

MOSFET N-CH 600V 1A DPAK

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor's FQD1N60TM is an N-Channel Power MOSFET from the QFET® series, designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 1A at 25°C case temperature. The MOSFET offers a low on-resistance of 11.5 Ohm maximum at 500mA and 10V Vgs, contributing to reduced conduction losses. Key parameters include a gate charge (Qg) of 6 nC maximum at 10V and input capacitance (Ciss) of 150 pF maximum at 25V. With a maximum power dissipation of 30W at 25°C case temperature and 2.5W at 25°C ambient temperature, it is suitable for applications requiring robust thermal management. The TO-252 (DPAK) surface-mount package facilitates efficient board-level integration. This component finds application in power supplies, lighting, and motor control systems.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A (Tc)
Rds On (Max) @ Id, Vgs11.5Ohm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 25 V

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