FQD17N08LTF
MOSFET N-CH 80V 12.9A TO252Manufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQD17N08LTF is an N-Channel Power MOSFET from the QFET® series. This component features a Drain-to-Source Voltage (Vdss) of 80V and a continuous Drain Current (Id) of 12.9A at 25°C. The Rds(On) is specified at a maximum of 100mOhm at 6.45A and 10V Vgs. It offers a Gate Charge (Qg) of 11.5 nC maximum at 5V Vgs and input capacitance (Ciss) of 520 pF maximum at 25V Vds. The device is available in a TO-252 (DPAK) surface mount package. Power dissipation is rated at 2.5W (Ta) and 40W (Tc). Operating temperature range is from -55°C to 150°C. This MOSFET is suitable for applications in power supply units, motor control, and DC-DC converters across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 6.45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 25 V |
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