FQB9N50CFTM
MOSFET N-CH 500V 9A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FRFET® series N-Channel Power MOSFET, FQB9N50CFTM, offers a 500V drain-source breakdown voltage and 9A continuous drain current at 25°C (Tc). This TO-263 (D2PAK) surface-mount device features a maximum on-resistance of 850mOhm at 4.5A and 10V gate-source voltage. With a continuous drain current capability of 9A and power dissipation of 173W at 25°C (Tc), it is suitable for applications requiring high voltage switching. Key parameters include 35 nC gate charge at 10V and 1030 pF input capacitance at 25V. The operating temperature range is -55°C to 150°C (TJ). This component finds application in power supply and power factor correction circuits, among other demanding applications.
Additional Information
Series: FRFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 173W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 25 V |
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