FQB9N25CTM
MOSFET N-CH 250V 8.8A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel MOSFET, part number FQB9N25CTM, offers a 250V drain-source breakdown voltage and a continuous drain current of 8.8A at 25°C (Tc). This device features a maximum on-resistance of 430mOhm at 4.4A and 10V Vgs. With a gate charge of 35 nC at 10V and input capacitance of 710 pF at 25V, this MOSFET is designed for efficient switching. The TO-263 (D2PAK) surface mount package provides thermal performance with a maximum power dissipation of 74W (Tc). Operating across a temperature range of -55°C to 150°C, the FQB9N25CTM is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
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