FQB9N08TM
MOSFET N-CH 80V 9.3A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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The Fairchild Semiconductor FQB9N08TM is an N-Channel QFET® series MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 80V and a continuous drain current (Id) capability of 9.3A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 210mOhm at 4.65A and 10V gate drive, it offers low conduction losses. The FQB9N08TM is housed in a TO-263 (D2PAK) surface mount package, facilitating thermal management with a maximum power dissipation of 40W (Tc). Key electrical characteristics include an input capacitance (Ciss) of 250pF at 25V and a gate charge (Qg) of 7.7nC at 10V. This component is suitable for use in power supplies, motor control, and general-purpose switching in industrial and consumer electronics.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 4.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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