FQB8N60CFTM
MOSFET N-CH 600V 6.26A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQB8N60CFTM is an N-Channel FRFET® MOSFET with a Drain-to-Source Voltage (Vdss) of 600V. This device offers a continuous drain current (Id) of 6.26A at 25°C (Tc) and a maximum power dissipation of 147W (Tc). Key electrical parameters include a maximum Rds(on) of 1.5 Ohm at 3.13A and 10V, with a gate charge (Qg) of 36 nC at 10V. Input capacitance (Ciss) is rated at 1255 pF at 25V. The device operates across a temperature range of -55°C to 150°C (TJ). Mounted in a TO-263-3, D2PAK package, the FQB8N60CFTM is suitable for applications in power supply, lighting, and motor control.
Additional Information
Series: FRFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.26A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 147W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1255 pF @ 25 V |
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