FQB7N65CTM
MOSFET N-CH 650V 7A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQB7N65CTM is a QFET® series N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 7 A at 25°C (Tc), with a maximum power dissipation of 173 W (Tc). The Rds On is specified at a maximum of 1.4 Ohm at 3.5 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 36 nC at 10 V and an Input Capacitance (Ciss) of 1245 pF at 25 V. The device is housed in a TO-263-3, D2PAK surface mount package, supporting an operating temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, lighting, and motor control applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 173W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1245 pF @ 25 V |
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