FQB7N30TM
MOSFET N-CH 300V 7A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQB7N30TM is a 300V N-Channel Power MOSFET. This device features a continuous drain current of 7A (Tc) at 25°C and a low on-resistance of 700mOhm maximum at 3.5A, 10V. With a drain-source voltage (Vdss) of 300V and a gate-source voltage (Vgs) limit of ±30V, it is suitable for demanding applications. The FQB7N30TM offers a maximum gate charge (Qg) of 17nC at 10V and an input capacitance (Ciss) of 610pF at 25V. It supports a maximum power dissipation of 85W (Tc) and 3.13W (Ta). Packaged in a TO-263 (D2PAK) surface-mount configuration, this MOSFET is utilized in power supply, motor control, and industrial automation sectors. Operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
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