FQB7N10TM
MOSFET N-CH 100V 7.3A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQB7N10TM from the QFET® series is a N-Channel MOSFET designed for power switching applications. This TO-263 (D2PAK) surface mount device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 7.3A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 350mOhm at 3.65A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 7.5 nC at 10V and input capacitance (Ciss) of 250 pF at 25V. Maximum power dissipation is rated at 40W (Tc) and 3.75W (Ta). The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in industrial power supplies, motor control, and automotive electronics.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 3.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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