FQB70N08TM
MOSFET N-CH 80V 70A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQB70N08TM is an N-Channel Power MOSFET designed for high-current applications. This component features a drain-to-source voltage (Vdss) of 80V and a continuous drain current (Id) of 70A at 25°C (Tc). The low on-resistance of 17mOhm at 35A and 10V drive voltage (Vgs) ensures efficient power transfer. With a maximum gate charge (Qg) of 98 nC at 10V and input capacitance (Ciss) of 2700 pF at 25V, it is suitable for demanding switching applications. The device offers a maximum power dissipation of 155W at 25°C (Tc) and 3.75W at 25°C (Ta). Packaged in a TO-263-3, D2PAK surface-mount configuration, this MOSFET operates across a temperature range of -55°C to 175°C (TJ). Its robust design makes it a staple in power supply units, motor control, and industrial automation systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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