FQB6N70TM
MOSFET N-CH 700V 6.2A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® series N-Channel MOSFET, part number FQB6N70TM. This TO-263 (D2PAK) surface mount device features a 700V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.2A at 25°C (Tc). With a maximum Rds(on) of 1.5 Ohms at 3.1A and 10V Vgs, it offers efficient power handling with 142W power dissipation at 25°C (Tc). Key parameters include 40 nC gate charge (Qg) at 10V and 1400 pF input capacitance (Ciss) at 25V. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 142W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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