FQB6N50TM
MOSFET N-CH 500V 5.5A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FQB6N50TM is an N-Channel Power MOSFET from the QFET® series. This component offers a 500V drain-source voltage and a continuous drain current of 5.5A at 25°C (Tc). The device features a maximum on-resistance of 1.3 Ohm at 2.8A and 10V gate-source voltage. Designed for surface mounting, it is housed in a TO-263 (D2PAK) package. Key parameters include a typcial gate charge of 22 nC at 10V and input capacitance of 790 pF at 25V. Power dissipation is rated at 3.13W (Ta) and 130W (Tc). This MOSFET is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 130W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
