FQB55N06TM
MOSFET N-CH 60V 55A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQB55N06TM is an N-Channel QFET® series MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 55A at 25°C. The low on-resistance of 20mOhm is achieved at 27.5A and a gate-source voltage of 10V, with a drive voltage range of 10V. Key parameters include a maximum gate charge (Qg) of 46 nC at 10V and an input capacitance (Ciss) of 1690 pF at 25V. The device boasts a maximum power dissipation of 133W at 25°C (Tc) and 3.75W at 25°C (Ta). Housed in a TO-263-3, D2PAK surface mount package, it operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 27.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 133W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1690 pF @ 25 V |
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