FQB4N20TM
MOSFET N-CH 200V 3.6A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQB4N20TM is a 200V N-Channel MOSFET designed for demanding applications. This surface-mount device, packaged in a TO-263 (D2PAK), offers a continuous drain current of 3.6A at 25°C (Tc) with a maximum Rds On of 1.4 Ohm at 1.8A and 10V gate drive. Key characteristics include a gate charge of 6.5 nC at 10V and input capacitance of 220 pF at 25V. Power dissipation is rated at 3.13W (Ta) and 45W (Tc). This component finds utility in power supply switching, motor control, and lighting applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V |
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