FQB3P20TM
MOSFET P-CH 200V 2.8A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® FQB3P20TM is a P-channel MOSFET with a drain-source breakdown voltage of 200V. This device offers a continuous drain current of 2.8A at 25°C (Tc) and a maximum on-resistance of 2.7 Ohms at 1.4A, 10V. Designed for surface mounting, it utilizes the TO-263 (D2PAK) package. Key specifications include a gate charge of 8 nC at 10V and input capacitance of 250 pF at 25V. The operating temperature range is -55°C to 150°C. This component is suitable for applications in power management and switching circuits across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 52W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |