FQB3N40TM
MOSFET N-CH 400V 2.5A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor FQB3N40TM is a N-Channel QFET® series MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 2.5A at 25°C (Tc). The Rds On is specified at a maximum of 3.4 Ohms at 1.25A and 10V gate-source voltage. Key parameters include input capacitance (Ciss) of 230 pF at 25V and gate charge (Qg) of 7.5 nC at 10V. The device is housed in a TO-263 (D2PAK) surface mount package, offering excellent thermal performance with a maximum power dissipation of 55W at 25°C (Tc). Operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in industrial power supplies, lighting, and consumer electronics where robust switching performance is critical.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |