FQB32N12V2TM
MOSFET N-CH 120V 32A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel Power MOSFET, FQB32N12V2TM, offers a 120V drain-source voltage and a continuous drain current of 32A at 25°C (Tc). This device features a low Rds(On) of 50mOhm maximum at 16A and 10V Vgs. The TO-263 (D2PAK) surface mount package provides efficient thermal management with a power dissipation of 150W at 25°C (Tc) and 3.75W at 25°C (Ta). Key parameters include a gate charge of 53 nC at 10V and an input capacitance of 1860 pF at 25V. Operating temperature range is -55°C to 175°C (TJ). Applications include power switching in industrial and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1860 pF @ 25 V |
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