FQB20N06TM
MOSFET N-CH 60V 20A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's FQB20N06TM is a QFET® series N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 20A at 25°C (Tc). The device boasts a low on-resistance (Rds On) of 60mOhm maximum at 10A and 10V gate-source voltage (Vgs). Key electrical parameters include a typical input capacitance (Ciss) of 590pF at 25V and a gate charge (Qg) of 15nC at 10V. With a maximum power dissipation of 53W at 25°C (Tc) and 3.75W at 25°C (Ta), the FQB20N06TM is suitable for power management and switching circuits in industries such as industrial automation, power supplies, and automotive electronics. It is housed in a TO-263 (D2PAK) surface mount package.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 53W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 25 V |