FQB19N10LTM
MOSFET N-CH 100V 19A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQB19N10LTM is a QFET® series N-Channel MOSFET designed for efficient power switching. This TO-263 (D2PAK) surface mount device offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 19A at 25°C (Tc). Key electrical characteristics include a maximum Rds(on) of 100mOhm at 9.5A and 10V, with gate drive voltages ranging from 5V to 10V. The device features a gate charge (Qg) of 18 nC at 5V and an input capacitance (Ciss) of 870 pF at 25V. With a maximum power dissipation of 75W (Tc), it is suitable for demanding applications in the industrial and automotive sectors. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 75W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
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