FQB17N08TM
MOSFET N-CH 80V 16.5A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® FQB17N08TM is an N-channel power MOSFET designed for demanding applications. This surface-mount device features a drain-source voltage (Vdss) of 80V and a continuous drain current (Id) of 16.5A at 25°C. The FQB17N08TM offers a low on-resistance (Rds On) of 115mOhm maximum at 8.25A and 10V gate drive. Key parameters include a gate charge (Qg) of 15 nC maximum at 10V and input capacitance (Ciss) of 450 pF maximum at 25V. Power dissipation is rated at 3.13W (Ta) and 65W (Tc). The component is housed in a TO-263 (D2PAK) package, suitable for efficient thermal management. This MOSFET is utilized across various industries, including industrial power supplies and automotive systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 8.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 65W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
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