FQB16N15TM
MOSFET N-CH 150V 16.4A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQB16N15TM is an N-Channel MOSFET from the QFET® series. This device features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 16.4A at 25°C (Tc). The Rds On is specified at a maximum of 160mOhm at 8.2A and 10V Vgs. Key parameters include a gate charge (Qg) of 30 nC (max) at 10V and input capacitance (Ciss) of 910 pF (max) at 25V. Designed for surface mounting, it is housed in a TO-263 (D2PAK) package. Power dissipation is rated at 3.75W (Ta) and 108W (Tc). This component is suitable for applications in power supply and motor control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 8.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 108W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V |
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