FQB14N30TM
MOSFET N-CH 300V 14.4A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQB14N30TM is an N-Channel Power MOSFET from the QFET® series. This component features a Drain to Source Voltage (Vdss) of 300V and a continuous drain current (Id) capability of 14.4A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 290mOhm at 7.2A and 10V gate drive. Key parameters include a gate charge (Qg) of 40 nC at 10V and input capacitance (Ciss) of 1360 pF at 25V. The MOSFET is housed in a TO-263 (D2PAK) surface-mount package, offering a maximum power dissipation of 147W at 25°C (Tc). This component is suitable for applications in power supply and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 147W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
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