FQAF9P25
MOSFET P-CH 250V 7.1A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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The Fairchild Semiconductor QFET® FQAF9P25 is a P-Channel Power MOSFET with a drain-to-source voltage (Vdss) of 250 V. This device features a continuous drain current (Id) of 7.1 A at 25°C (Tc) and a maximum power dissipation of 70 W (Tc). The on-resistance (Rds On) is specified at 620 mOhm at 3.55 A and 10 V gate-source voltage. The input capacitance (Ciss) is a maximum of 1180 pF at 25 V, with a gate charge (Qg) of 38 nC at 10 V. The FQAF9P25 is housed in a TO-3PF package, suitable for through-hole mounting. This component is utilized in industrial applications requiring high voltage switching.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 3.55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 25 V |
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