FQAF90N08
MOSFET N-CH 80V 56A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® series N-channel MOSFET, part number FQAF90N08. This device features an 80 V drain-to-source voltage (Vdss) and supports a continuous drain current of 56A (Tc) at 25°C. The Rds On is specified at a maximum of 16 mOhm for 28A and 10V Vgs. Key parameters include a gate charge (Qg) of 110 nC (max) at 10V and input capacitance (Ciss) of 3250 pF (max) at 25V. This MOSFET offers a maximum power dissipation of 100W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). The component utilizes Metal Oxide technology and is housed in a TO-3PF package, suitable for through-hole mounting. Applications for this device are found in industrial and power supply sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3250 pF @ 25 V |
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