FQAF8N80
MOSFET N-CH 800V 5.9A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® FQAF8N80 is an 800V N-Channel Power MOSFET designed for high-voltage applications. This component features a continuous drain current of 5.9A (Tc) and a maximum power dissipation of 107W (Tc). The Rds On is specified at 1.2 Ohm maximum at 2.95A and 10V gate drive. Key parameters include a Vgs(th) of 5V (max) at 250µA, input capacitance (Ciss) of 2350pF (max) at 25V, and gate charge (Qg) of 57nC (max) at 10V. The FQAF8N80 is housed in a TO-3PF package, suitable for through-hole mounting, and operates across a junction temperature range of -55°C to 150°C. This device finds application in power supply units and other high-voltage switching circuits.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 25 V |
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