FQAF7N90
MOSFET N-CH 900V 5.2A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel Power MOSFET, FQAF7N90, offers a robust 900V drain-source voltage rating and a continuous drain current capability of 5.2A at 25°C. This through-hole component, housed in a TO-3PF package, features a low on-resistance of 1.55 Ohm maximum at 2.6A and 10V gate-source voltage. The device exhibits a maximum power dissipation of 107W at 25°C and a gate charge of 59 nC at 10V. With an input capacitance of 2280 pF maximum, it is suitable for applications requiring high voltage switching and power conversion in industrial, consumer electronics, and lighting sectors. Operating temperature ranges from -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.55Ohm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2280 pF @ 25 V |
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