FQAF70N15
MOSFET N-CH 150V 44A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQAF70N15 is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 44A at 25°C, with a maximum power dissipation of 130W. Key electrical characteristics include a maximum on-resistance (Rds On) of 28mOhm at 22A and 10V, and a gate charge (Qg) of 175 nC at 10V. The input capacitance (Ciss) is specified at 5400 pF at 25V. Operating across a temperature range of -55°C to 175°C, the FQAF70N15 is packaged in a TO-3PF. This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 175 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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