FQAF6N90
MOSFET N-CH 900V 4.5A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's QFET® series MOSFET, part number FQAF6N90, is an N-Channel power MOSFET with a Drain-Source Voltage (Vdss) of 900 V. This through-hole component, housed in a TO-3PF package, offers a continuous drain current of 4.5 A (Tc) and a maximum power dissipation of 96 W (Tc). Key electrical parameters include a maximum Rds On of 1.9 Ohms at 2.3 A and 10 V, and a gate charge (Qg) of 52 nC at 10 V. Input capacitance (Ciss) is a maximum of 1880 pF at 25 V. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage of ±30 V and a gate threshold voltage (Vgs(th)) of 5 V at 250 µA. This device is utilized in applications requiring high voltage switching, such as power supplies and industrial controls.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.9Ohm @ 2.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1880 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
