FQAF6N80
MOSFET N-CH 800V 4.4A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series N-Channel Power MOSFET, part number FQAF6N80, is engineered for high voltage applications. This through-hole component features a Drain-Source Voltage (Vdss) of 800V and a continuous drain current (Id) of 4.4A at 25°C (Tc). With a maximum power dissipation of 90W (Tc), it is suitable for demanding power conversion tasks. The FQAF6N80 offers a low on-resistance (Rds On) of 1.95 Ohms at 2.2A and 10V, with a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 1500 pF at 25V. The TO-3PF package ensures robust thermal performance and ease of mounting. This device finds utility in power supply units, lighting control, and industrial motor drives. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.95Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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