FQAF44N10
MOSFET N-CH 100V 33A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Fairchild Semiconductor FQAF44N10 is an N-Channel QFET® series power MOSFET designed for robust switching applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 33A at 25°C (Tc). With a maximum on-resistance (Rds On) of 39mOhm at 16.5A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 85W (Tc). The FQAF44N10 has a typical gate charge (Qg) of 62 nC at 10V and input capacitance (Ciss) of 1800 pF at 25V. It is housed in a TO-3PF through-hole package, suitable for demanding thermal management. Operating temperature range is -55°C to 175°C (TJ). This component finds application in power supply units, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 16.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
