FQAF44N08
MOSFET N-CH 80V 35.6A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's QFET® series N-Channel Power MOSFET, part number FQAF44N08, is an 80V device featuring a continuous drain current capability of 35.6A at 25°C (Tc) and a maximum power dissipation of 83W (Tc). This through-hole component, housed in a TO-3PF package, offers a low on-resistance of 34mOhm at 17.8A and 10V. Key electrical characteristics include a gate charge (Qg) of 50 nC at 10V and input capacitance (Ciss) of 1430 pF at 25V. The device operates across a temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) up to ±25V. Its robust design makes it suitable for applications in power supply, motor control, and general-purpose switching.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 17.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
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