FQAF40N25
MOSFET N-CH 250V 24A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's FQAF40N25 is an N-Channel Power MOSFET from the QFET® series, designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 24A at 25°C (Tc), with a maximum power dissipation of 108W (Tc). The Rds On is specified at a maximum of 70mOhm at 12A and 10V gate drive. Key characteristics include a maximum Gate Charge (Qg) of 110 nC at 10V and an input capacitance (Ciss) of 4000 pF at 25V. The device is housed in a TO-3PF through-hole package and operates within a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 108W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
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