FQAF34N25
MOSFET N-CH 250V 21.7A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor N-Channel Power MOSFET, FQAF34N25. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 21.7A at 25°C. The Rds (On) is specified at a maximum of 85mOhm at 10.9A and 10V gate drive. With a maximum power dissipation of 100W (Tc), this MOSFET is housed in a TO-3PF package for through-hole mounting. Key characteristics include a gate charge (Qg) of 80 nC @ 10V and input capacitance (Ciss) of 2750 pF @ 25V. The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 10.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2750 pF @ 25 V |
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