FQAF33N10
MOSFET N-CH 100V 25.8A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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The Fairchild Semiconductor FQAF33N10 is a QFET® series N-Channel Power MOSFET designed for demanding applications. This through-hole component features a 100V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 25.8A at 25°C (Tc). With a maximum power dissipation of 83W (Tc) and a low Rds On of 52mOhm at 12.9A and 10V, it offers efficient power handling. The device has a gate charge (Qg) of 51 nC at 10V and an input capacitance (Ciss) of 1500 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), it is housed in a TO-3PF package. This MOSFET is suitable for use in power switching, motor control, and power supply applications across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 12.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
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