FQAF28N15
MOSFET N-CH 150V 22A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor QFET® N-Channel MOSFET, part number FQAF28N15. This through-hole component features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain Current (Id) of 22A (Tc) at 25°C. The maximum power dissipation is 102W (Tc). Key parameters include a maximum On-Resistance (Rds On) of 90mOhm at 11A and 10V, and a Gate Charge (Qg) of 52 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 1600 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ). The TO-3PF package is suitable for applications in power supply units, motor control, and industrial automation. Maximum Gate-Source Voltage (Vgs) is ±25V.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 102W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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