FQAF19N60
MOSFET N-CH 600V 11.2A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQAF19N60 is a high-performance N-Channel Power MOSFET designed for demanding applications. It features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 11.2A at 25°C (Tc), with a maximum power dissipation of 120W (Tc). The device offers a low on-resistance of 380mOhm maximum at 5.6A and 10V gate-source voltage (Vgs), facilitated by a 10V drive voltage. Key parameters include a maximum gate charge (Qg) of 90nC at 10V and an input capacitance (Ciss) of 3600pF maximum at 25V. This through-hole component utilizes the TO-3PF package, suitable for industrial, power supply, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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