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FQAF19N20L

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FQAF19N20L

MOSFET N-CH 200V 16A TO3PF

Manufacturer: Fairchild Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Fairchild Semiconductor QFET® N-Channel Power MOSFET, part number FQAF19N20L, offers a 200V drain-source breakdown voltage and a continuous drain current capability of 16A at 25°C (Tc). This through-hole device, packaged in a TO-3PF, features a maximum power dissipation of 85W (Tc). The on-resistance (Rds On) is rated at 140mOhm maximum at 8A and 10V Vgs. Gate charge (Qg) is 35 nC maximum at 5V Vgs, and input capacitance (Ciss) is 2200 pF maximum at 25V Vds. The device operates within a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. This MOSFET is suitable for applications in power supply units, motor control, and lighting systems.

Additional Information

Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Tc)
Rds On (Max) @ Id, Vgs140mOhm @ 8A, 10V
FET Feature-
Power Dissipation (Max)85W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-3PF
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 25 V

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