FQAF19N20L
MOSFET N-CH 200V 16A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor QFET® N-Channel Power MOSFET, part number FQAF19N20L, offers a 200V drain-source breakdown voltage and a continuous drain current capability of 16A at 25°C (Tc). This through-hole device, packaged in a TO-3PF, features a maximum power dissipation of 85W (Tc). The on-resistance (Rds On) is rated at 140mOhm maximum at 8A and 10V Vgs. Gate charge (Qg) is 35 nC maximum at 5V Vgs, and input capacitance (Ciss) is 2200 pF maximum at 25V Vds. The device operates within a temperature range of -55°C to 150°C (TJ) and supports gate-source voltages up to ±20V. This MOSFET is suitable for applications in power supply units, motor control, and lighting systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
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