FQAF19N20
MOSFET N-CH 200V 15A TO3PFManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor's QFET® series FQAF19N20 is a 200 V N-channel Power MOSFET in a TO-3PF package. This device offers a continuous drain current of 15 A at 25°C (Tc) and a low on-resistance of 150 mO maximum at 7.5 A and 10 V gate drive. The FQAF19N20 features a maximum power dissipation of 85 W (Tc) and a gate charge (Qg) of 40 nC at 10 V. Input capacitance (Ciss) is rated at 1600 pF maximum at 25 V. With a junction temperature range of -55°C to 150°C, this MOSFET is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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